IRLR8503

MOSFET N-CH 30V 44A DPAK

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Specifications
Part Number:IRLR8503
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 30V 44A DPAK
Nkesp Part Number:73D-IRLR8503
Part Status4716 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D-Pak
Series:HEXFET®
Rds On (Max) @ Id, Vgs:16mOhm @ 15A, 10V
Power Dissipation (Max):62W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
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In stock: 4716 pcs

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Product Comparison

Part Number IRLR8503
IRLR8503
IRLR8113TRRPBF
IRLR8113TRRPBF
IRLR8113TR
IRLR8113TR
IRLR8503TRL
IRLR8503TRL
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 25 V2920 pF @ 15 V2920 pF @ 15 V1650 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C44A (Tc)94A (Tc)94A (Tc)44A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V6mOhm @ 15A, 10V6mOhm @ 15A, 10V16mOhm @ 15A, 10V
Power Dissipation (Max)62W (Tc)89W (Tc)89W (Tc)62W (Tc)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackageD-PakD-PakD-PakD-Pak
FET Feature----
Vgs (Max)±20V±20V±20V±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA2.25V @ 250µA2.25V @ 250µA3V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTubeTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)30 V30 V30 V30 V
SeriesHEXFET®HEXFET®HEXFET®HEXFET®
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V32 nC @ 4.5 V32 nC @ 4.5 V20 nC @ 5 V

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