IRLL2705PBF

MOSFET N-CH 55V 3.8A SOT223

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Specifications
Part Number:IRLL2705PBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 3.8A SOT223
RoHs Status:
Nkesp Part Number:73D-IRLL2705PBF
Part Status3192 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-223
Series:HEXFET®
Rds On (Max) @ Id, Vgs:40mOhm @ 3.8A, 10V
Power Dissipation (Max):1W (Ta)
Package / Case:TO-261-4, TO-261AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)

In stock: 3192 pcs

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International Rectifier
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Product Comparison

Part Number IRLL2705PBF
IRLL2705PBF
IRLM110ATF
IRLM110ATF
IRLL3303TRPBF
IRLL3303TRPBF
IRLM120ATF
IRLM120ATF
ManufacturerInternational RectifieronsemiInternational Rectifieronsemi
Power Dissipation (Max)1W (Ta)2.2W (Tc)1W (Ta)2.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V8 nC @ 5 V50 nC @ 10 V15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 25 V235 pF @ 25 V840 pF @ 25 V440 pF @ 25 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesHEXFET®-HEXFET®-
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Vgs(th) (Max) @ Id2V @ 250µA2V @ 250µA1V @ 250µA2V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackageSOT-223SOT-223-4SOT-223SOT-223-4
Vgs (Max)±16V±20V±16V±20V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V5V4.5V, 10V5V
Rds On (Max) @ Id, Vgs40mOhm @ 3.8A, 10V440mOhm @ 750mA, 5V31mOhm @ 4.6A, 10V220mOhm @ 1.15A, 5V
PackageTubeTape & Reel (TR)BulkTape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)1.5A (Tc)4.6A (Ta)2.3A (Tc)
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drain to Source Voltage (Vdss)55 V100 V30 V100 V

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