IRLD110PBF

MOSFET N-CH 100V 1A 4DIP

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RFQ
Specifications
Part Number:IRLD110PBF
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 100V 1A 4DIP
RoHs Status:
Nkesp Part Number:73D-IRLD110PBF
Part Status23685 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:2V @ 250µA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-HVMDIP
Series:-
Rds On (Max) @ Id, Vgs:540mOhm @ 600mA, 5V
Power Dissipation (Max):1.3W (Ta)
Package / Case:4-DIP (0.300", 7.62mm)
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Base Product Number:IRLD110
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In stock: 23685 pcs

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Data sheet

Product Comparison

Part Number IRLD110PBF
IRLD110PBF
IRLC4030EB
IRLC4030EB
IRLH6224TRPBF
IRLH6224TRPBF
IRLD024
IRLD024
ManufacturerVishay SiliconixInfineon TechnologiesInfineon TechnologiesVishay Siliconix
Rds On (Max) @ Id, Vgs540mOhm @ 600mA, 5V-3mOhm @ 20A, 4.5V100mOhm @ 1.5A, 5V
TechnologyMOSFET (Metal Oxide)-MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA-1.1V @ 50µA2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)4V, 5V-2.5V, 4.5V4V, 5V
Drain to Source Voltage (Vdss)100 V-20 V60 V
Package / Case4-DIP (0.300", 7.62mm)-8-PowerTDFN4-DIP (0.300", 7.62mm)
Vgs (Max)±10V-±12V±10V
Base Product NumberIRLD110-IRLH6224IRLD024
Operating Temperature-55°C ~ 175°C (TJ)--55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
FET TypeN-Channel-N-ChannelN-Channel
PackageTubeBulkTape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C1A (Ta)-28A (Ta), 105A (Tc)2.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V-3710 pF @ 10 V870 pF @ 25 V
Series-*HEXFET®-
Supplier Device Package4-HVMDIP-8-PQFN (5x6)4-HVMDIP
Power Dissipation (Max)1.3W (Ta)-3.6W (Ta), 52W (Tc)1.3W (Ta)
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 5 V-86 nC @ 10 V18 nC @ 5 V
Mounting TypeThrough Hole-Surface MountThrough Hole
FET Feature----

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