IRLB4132PBF

MOSFET N-CH 30V 78A TO220AB

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Specifications
Part Number:IRLB4132PBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 30V 78A TO220AB
RoHs Status:
Nkesp Part Number:73D-IRLB4132PBF
Part Status48409 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.35V @ 100µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HEXFET®
Rds On (Max) @ Id, Vgs:3.5mOhm @ 40A, 10V
Power Dissipation (Max):140W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:5110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:78A (Tc)
Base Product Number:IRLB4132
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In stock: 48409 pcs

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Product Comparison

Part Number IRLB4132PBF
IRLB4132PBF
IRLBA1304P
IRLBA1304P
IRLB3034PBF
IRLB3034PBF
IRLBA1304
IRLBA1304
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Current - Continuous Drain (Id) @ 25°C78A (Tc)185A (Tc)195A (Tc)185A (Tc)
PackageTubeTubeTubeTube
Gate Charge (Qg) (Max) @ Vgs54 nC @ 4.5 V140 nC @ 4.5 V162 nC @ 4.5 V140 nC @ 4.5 V
Package / CaseTO-220-3TO-273AATO-220-3TO-273AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
SeriesHEXFET®HEXFET®HEXFET®HEXFET®
Supplier Device PackageTO-220ABSUPER-220™ (TO-273AA)TO-220ABSUPER-220™ (TO-273AA)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs3.5mOhm @ 40A, 10V4mOhm @ 110A, 10V1.7mOhm @ 195A, 10V4mOhm @ 110A, 10V
Drain to Source Voltage (Vdss)30 V40 V40 V40 V
Power Dissipation (Max)140W (Tc)300W (Tc)375W (Tc)300W (Tc)
Base Product NumberIRLB4132-IRLB3034IRLBA130
Vgs(th) (Max) @ Id2.35V @ 100µA1V @ 250µA2.5V @ 250µA1V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds5110 pF @ 15 V7660 pF @ 25 V10315 pF @ 25 V7660 pF @ 25 V
Vgs (Max)±20V±16V±20V±16V
FET Feature----

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