IRL3202PBF

MOSFET N-CH 20V 48A TO220AB

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Specifications
Part Number:IRL3202PBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 20V 48A TO220AB
Nkesp Part Number:73D-IRL3202PBF
Part Status4791 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HEXFET®
Rds On (Max) @ Id, Vgs:16mOhm @ 29A, 7V
Power Dissipation (Max):69W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
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In stock: 4791 pcs

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Product Comparison

Part Number IRL3202PBF
IRL3202PBF
IRL3103LPBF
IRL3103LPBF
IRL3103STRRPBF
IRL3103STRRPBF
IRL3103S
IRL3103S
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±10V±16V±16V±16V
PackageTubeTubeTape & Reel (TR)Tube
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackageTO-220ABTO-262D2PAKD2PAK
Current - Continuous Drain (Id) @ 25°C48A (Tc)64A (Tc)64A (Tc)64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 15 V1650 pF @ 25 V1650 pF @ 25 V1650 pF @ 25 V
Vgs(th) (Max) @ Id700mV @ 250µA (Min)1V @ 250µA1V @ 250µA1V @ 250µA
Drain to Source Voltage (Vdss)20 V30 V30 V30 V
Power Dissipation (Max)69W (Tc)94W (Tc)94W (Tc)94W (Tc)
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Package / CaseTO-220-3TO-262-3 Long Leads, I²Pak, TO-262AATO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs16mOhm @ 29A, 7V12mOhm @ 34A, 10V12mOhm @ 34A, 10V12mOhm @ 34A, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V4.5V, 10V4.5V, 10V4.5V, 10V
SeriesHEXFET®HEXFET®HEXFET®HEXFET®
FET Feature----
Gate Charge (Qg) (Max) @ Vgs43 nC @ 4.5 V33 nC @ 4.5 V33 nC @ 4.5 V33 nC @ 4.5 V

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