IRL3102STRR

MOSFET N-CH 20V 61A D2PAK

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Specifications
Part Number:IRL3102STRR
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 20V 61A D2PAK
Nkesp Part Number:73D-IRL3102STRR
Part Status3204 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:13mOhm @ 37A, 7V
Power Dissipation (Max):89W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
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In stock: 3204 pcs

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Product Comparison

Part Number IRL3102STRR
IRL3102STRR
IRL2910STRRPBF
IRL2910STRRPBF
IRL3102L
IRL3102L
IRL3102STRLPBF
IRL3102STRLPBF
ManufacturerInfineon TechnologiesInfineon TechnologiesVishay SiliconixInfineon Technologies
PackageTape & Reel (TR)Tape & Reel (TR)TubeTape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 15 V3700 pF @ 25 V2500 pF @ 15 V2500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V-4.5V, 7V4.5V, 7V
Current - Continuous Drain (Id) @ 25°C61A (Tc)55A (Tc)61A (Tc)61A (Tc)
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-262-3 Long Leads, I²Pak, TO-262AATO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C ~ 150°C (TJ)--55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs58 nC @ 4.5 V140 nC @ 5 V58 nC @ 4.5 V58 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V100 V20 V20 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)89W (Tc)-89W (Tc)89W (Tc)
SeriesHEXFET®HEXFET®-HEXFET®
Supplier Device PackageD2PAKD2PAKTO-262-3D2PAK
FET Feature----
Vgs(th) (Max) @ Id700mV @ 250µA (Min)2V @ 250µA700mV @ 250µA (Min)700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs13mOhm @ 37A, 7V26mOhm @ 29A, 10V13mOhm @ 37A, 7V13mOhm @ 37A, 7V
Vgs (Max)±10V-±10V±10V

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