IRL2703SPBF

MOSFET N-CH 30V 24A D2PAK

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Part Number:IRL2703SPBF
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 30V 24A D2PAK
Nkesp Part Number:73D-IRL2703SPBF
Part Status3397 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:40mOhm @ 14A, 10V
Power Dissipation (Max):45W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
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In stock: 3397 pcs

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Product Comparison

Part Number IRL2703SPBF
IRL2703SPBF
IRL2703S
IRL2703S
IRL2703STRL
IRL2703STRL
IRL2505SPBF
IRL2505SPBF
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInternational Rectifier
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4V, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V450 pF @ 25 V450 pF @ 25 V5000 pF @ 25 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V30 V30 V55 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET Feature----
Supplier Device PackageD2PAKD2PAKD2PAKD2PAK
Current - Continuous Drain (Id) @ 25°C24A (Tc)24A (Tc)24A (Tc)104A (Tc)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PackageTubeTubeTape & Reel (TR)Bulk
Vgs (Max)±16V±16V±16V±16V
Rds On (Max) @ Id, Vgs40mOhm @ 14A, 10V40mOhm @ 14A, 10V40mOhm @ 14A, 10V8mOhm @ 54A, 10V
Power Dissipation (Max)45W (Tc)45W (Tc)45W (Tc)3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA1V @ 250µA1V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V15 nC @ 4.5 V15 nC @ 4.5 V130 nC @ 5 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesHEXFET®HEXFET®HEXFET®HEXFET®

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