IRL2203NSTRR

MOSFET N-CH 30V 116A D2PAK

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Part Number:IRL2203NSTRR
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 30V 116A D2PAK
Nkesp Part Number:73D-IRL2203NSTRR
Part Status4628 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:7mOhm @ 60A, 10V
Power Dissipation (Max):3.8W (Ta), 180W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:116A (Tc)
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In stock: 4628 pcs

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Product Comparison

Part Number IRL2203NSTRR
IRL2203NSTRR
IRL2203NSTRRPBF
IRL2203NSTRRPBF
IRL2203STRR
IRL2203STRR
IRL2505S
IRL2505S
ManufacturerInfineon TechnologiesInfineon TechnologiesVishay SiliconixInfineon Technologies
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tube
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA2.5V @ 250µA2V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs60 nC @ 4.5 V60 nC @ 4.5 V110 nC @ 4.5 V130 nC @ 5 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs7mOhm @ 60A, 10V7mOhm @ 60A, 10V7mOhm @ 60A, 10V8mOhm @ 54A, 10V
Drain to Source Voltage (Vdss)30 V30 V30 V55 V
Vgs (Max)±16V±16V±20V±16V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4V, 10V4V, 10V
Supplier Device PackageD2PAKD2PAKD²PAK (TO-263)D2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)3.8W (Ta), 180W (Tc)3.8W (Ta), 180W (Tc)3.8W (Ta), 130W (Tc)3.8W (Ta), 200W (Tc)
Current - Continuous Drain (Id) @ 25°C116A (Tc)116A (Tc)100A (Tc)104A (Tc)
Input Capacitance (Ciss) (Max) @ Vds3290 pF @ 25 V3290 pF @ 25 V3500 pF @ 25 V5000 pF @ 25 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesHEXFET®HEXFET®-HEXFET®
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----

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