IRFU420APBF

MOSFET N-CH 500V 3.3A TO251AA

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Specifications
Part Number:IRFU420APBF
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 500V 3.3A TO251AA
RoHs Status:
Nkesp Part Number:73D-IRFU420APBF
Part Status26122 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-251AA
Series:-
Rds On (Max) @ Id, Vgs:3Ohm @ 1.5A, 10V
Power Dissipation (Max):83W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Base Product Number:IRFU420
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In stock: 26122 pcs

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Data sheet

Product Comparison

Part Number IRFU420APBF
IRFU420APBF
IRFU4105Z
IRFU4105Z
IRFU4105ZTR
IRFU4105ZTR
IRFU48ZPBF
IRFU48ZPBF
ManufacturerVishay SiliconixInfineon TechnologiesVishay SiliconixInfineon Technologies
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V24.5mOhm @ 18A, 10V24.5mOhm @ 18A, 10V11mOhm @ 37A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Drain to Source Voltage (Vdss)500 V55 V55 V55 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 25 V740 pF @ 25 V740 pF @ 25 V1720 pF @ 25 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Supplier Device PackageTO-251AAIPAK (TO-251AA)TO-251AAIPAK (TO-251AA)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AATO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ Id4.5V @ 250µA4V @ 250µA4V @ 250µA4V @ 50µA
Power Dissipation (Max)83W (Tc)48W (Tc)48W (Tc)91W (Tc)
Series-HEXFET®-HEXFET®
Vgs (Max)±30V±20V±20V±20V
PackageTubeTubeTape & Reel (TR)Tube
Base Product NumberIRFU420-IRFU4105-
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)30A (Tc)30A (Tc)42A (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V27 nC @ 10 V27 nC @ 10 V60 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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