IRFSL7440PBF

MOSFET N CH 40V 120A TO-262

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RFQ
Specifications
Part Number:IRFSL7440PBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N CH 40V 120A TO-262
RoHs Status:
Nkesp Part Number:73D-IRFSL7440PBF
Part Status23269 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.9V @ 100µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-262
Series:HEXFET®, StrongIRFET™
Rds On (Max) @ Id, Vgs:2.5mOhm @ 100A, 10V
Power Dissipation (Max):208W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:4730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Base Product Number:IRFSL7440
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In stock: 23269 pcs

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Data sheet

Product Comparison

Part Number IRFSL7440PBF
IRFSL7440PBF
IRFSL7437TRLPBF
IRFSL7437TRLPBF
IRFSL9N60A
IRFSL9N60A
IRFSL59N10D
IRFSL59N10D
ManufacturerInfineon TechnologiesInfineon TechnologiesVishay SiliconixInfineon Technologies
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V225 nC @ 10 V49 nC @ 10 V114 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V6V, 10V10V10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)208W (Tc)230W (Tc)170W (Tc)3.8W (Ta), 200W (Tc)
SeriesHEXFET®, StrongIRFET™HEXFET®, StrongIRFET™-HEXFET®
Base Product NumberIRFSL7440-IRFSL9-
Rds On (Max) @ Id, Vgs2.5mOhm @ 100A, 10V1.8mOhm @ 100A, 10V750mOhm @ 5.5A, 10V25mOhm @ 35.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds4730 pF @ 25 V7330 pF @ 25 V1400 pF @ 25 V2450 pF @ 25 V
Vgs(th) (Max) @ Id3.9V @ 100µA3.9V @ 150µA4V @ 250µA5.5V @ 250µA
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
PackageTubeTape & Reel (TR)TubeTube
Supplier Device PackageTO-262TO-262TO-262-3TO-262
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
FET Feature----
Drain to Source Voltage (Vdss)40 V40 V600 V100 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Vgs (Max)±20V±20V±30V±30V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)195A (Tc)9.2A (Tc)59A (Tc)

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