In stock: 3442 pcs
Part Number |
IRFSL23N20D
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IRFSL3006PBF
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IRFSL3207
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IRFSL3004PBF
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Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
FET Feature | - | - | - | - | |
Current - Continuous Drain (Id) @ 25°C | 24A (Tc) | 195A (Tc) | 180A (Tc) | 195A (Ta) | |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V | 300 nC @ 10 V | 260 nC @ 10 V | 240 nC @ 10 V | |
Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V | 8970 pF @ 50 V | 7600 pF @ 50 V | 9200 pF @ 25 V | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
Drain to Source Voltage (Vdss) | 200 V | 60 V | 75 V | 40 V | |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V | |
Package | Tube | Tube | Tube | Tube | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V | 2.5mOhm @ 170A, 10V | 4.5mOhm @ 75A, 10V | 1.75mOhm @ 195A, 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
Series | HEXFET® | HEXFET® | HEXFET® | HEXFET® | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) | 375W (Tc) | 330W (Tc) | 380W (Tc) | |
Supplier Device Package | TO-262 | TO-262 | TO-262 | TO-262 |
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