IRFS59N10DPBF

SMPS HEXFET POWER MOSFET

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RFQ
Specifications
Part Number:IRFS59N10DPBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:SMPS HEXFET POWER MOSFET
RoHs Status:
Nkesp Part Number:73D-IRFS59N10DPBF
Part Status3199 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:5.5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:25mOhm @ 35.4A, 10V
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)

In stock: 3199 pcs

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Product Comparison

Part Number IRFS59N10DPBF
IRFS59N10DPBF
IRFS5620PBF
IRFS5620PBF
IRFS59N10DTRLP
IRFS59N10DTRLP
IRFS634B_FP001
IRFS634B_FP001
ManufacturerInternational RectifierInfineon TechnologiesInternational RectifierFairchild Semiconductor
Vgs(th) (Max) @ Id5.5V @ 250µA5V @ 100µA5.5V @ 250µA4V @ 250µA
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V200 V100 V250 V
Power Dissipation (Max)3.8W (Ta), 200W (Tc)144W (Tc)3.8W (Ta), 200W (Tc)38W (Tc)
Vgs (Max)±30V±20V±30V±30V
Mounting TypeSurface MountSurface MountSurface MountThrough Hole
Current - Continuous Drain (Id) @ 25°C59A (Tc)24A (Tc)59A (Tc)8.1A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 35.4A, 10V77.5mOhm @ 15A, 10V25mOhm @ 35.4A, 10V450mOhm @ 4.05A, 10V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
PackageBulkTubeBulkTube
Drive Voltage (Max Rds On, Min Rds On)10V10V-10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesHEXFET®-HEXFET®-
Supplier Device PackageD2PAKD2PAKPG-TO263-3-2TO-220F-3
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V38 nC @ 10 V114 nC @ 10 V38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2450 pF @ 25 V1710 pF @ 50 V2450 pF @ 25 V1000 pF @ 25 V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3 Full Pack

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