IRFS17N20DTRR

MOSFET N-CH 200V 16A D2PAK

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Part Number:IRFS17N20DTRR
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 200V 16A D2PAK
Nkesp Part Number:73D-IRFS17N20DTRR
Part Status4623 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:5.5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:170mOhm @ 9.8A, 10V
Power Dissipation (Max):3.8W (Ta), 140W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
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In stock: 4623 pcs

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Product Comparison

Part Number IRFS17N20DTRR
IRFS17N20DTRR
IRFS250B
IRFS250B
IRFS150A
IRFS150A
IRFS11N50ATRRP
IRFS11N50ATRRP
ManufacturerInfineon TechnologiesFairchild SemiconductorFairchild SemiconductorVishay Siliconix
Rds On (Max) @ Id, Vgs170mOhm @ 9.8A, 10V85mOhm @ 10.65A, 10V40mOhm @ 15.5A, 10V520mOhm @ 6.6A, 10V
Supplier Device PackageD2PAKTO-3PFTO-3PFD²PAK (TO-263)
Vgs (Max)±30V±30V±20V±30V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id5.5V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
SeriesHEXFET®---
PackageTape & Reel (TR)BulkBulkTape & Reel (TR)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V3400 pF @ 25 V2270 pF @ 25 V1423 pF @ 25 V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-3P-3 Full PackTO-3P-3 Full PackTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Power Dissipation (Max)3.8W (Ta), 140W (Tc)90W (Tc)100W (Tc)170W (Tc)
Mounting TypeSurface MountThrough HoleThrough HoleSurface Mount
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V123 nC @ 10 V97 nC @ 10 V52 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C16A (Tc)21.3A (Tc)31A (Tc)11A (Tc)
FET Feature----
Drain to Source Voltage (Vdss)200 V200 V100 V500 V

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