IRFR6215TRR

MOSFET P-CH 150V 13A DPAK

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Specifications
Part Number:IRFR6215TRR
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET P-CH 150V 13A DPAK
Nkesp Part Number:73D-IRFR6215TRR
Part Status4312 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D-Pak
Series:HEXFET®
Rds On (Max) @ Id, Vgs:295mOhm @ 6.6A, 10V
Power Dissipation (Max):110W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
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In stock: 4312 pcs

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Product Comparison

Part Number IRFR6215TRR
IRFR6215TRR
IRFR7540TRPBF
IRFR7540TRPBF
IRFR6215TRPBF
IRFR6215TRPBF
IRFR7440TRPBF
IRFR7440TRPBF
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drive Voltage (Max Rds On, Min Rds On)10V6V, 10V10V6V, 10V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 25 V4360 pF @ 25 V860 pF @ 25 V4610 pF @ 25 V
SeriesHEXFET®StrongIRFET™HEXFET®HEXFET®
FET TypeP-ChannelN-ChannelP-ChannelN-Channel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)110W (Tc)140W (Tc)110W (Tc)140W (Tc)
FET Feature----
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C13A (Tc)90A (Tc)13A (Tc)90A (Tc)
Supplier Device PackageD-PakD-PAK (TO-252AA)D-PakPG-TO252-3
Drain to Source Voltage (Vdss)150 V60 V150 V40 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V130 nC @ 10 V66 nC @ 10 V134 nC @ 10 V
Vgs (Max)±20V±20V±20V±20V
Vgs(th) (Max) @ Id4V @ 250µA3.7V @ 100µA4V @ 250µA3.9V @ 100µA
Rds On (Max) @ Id, Vgs295mOhm @ 6.6A, 10V4.8mOhm @ 66A, 10V295mOhm @ 6.6A, 10V2.4mOhm @ 90A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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