IRFP140R

N-CHANNEL POWER MOSFET

Quantity
RFQ
Specifications
Part Number:IRFP140R
Manufacturer:Harris Corporation
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-IRFP140R
Part Status3737 pcs
Manufacturer:Harris Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247
Series:-
Rds On (Max) @ Id, Vgs:77mOhm @ 19A, 10V
Power Dissipation (Max):180W (Tc)
Package / Case:TO-247-3
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1275 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)

In stock: 3737 pcs

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Product Comparison

Part Number IRFP140R
IRFP140R
IRFP150NPBF
IRFP150NPBF
IRFP140PBF
IRFP140PBF
IRFP140
IRFP140
ManufacturerHarris CorporationInfineon TechnologiesVishay SiliconixFairchild Semiconductor
Drain to Source Voltage (Vdss)100 V100 V100 V100 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V-
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Rds On (Max) @ Id, Vgs77mOhm @ 19A, 10V36mOhm @ 23A, 10V77mOhm @ 19A, 10V77mOhm @ 19A, 10V
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Power Dissipation (Max)180W (Tc)160W (Tc)180W (Tc)-
Series-HEXFET®--
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageBulkTubeTubeTube
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 25 V1900 pF @ 25 V1700 pF @ 25 V1700 pF @ 25 V
Supplier Device PackageTO-247TO-247ACTO-247ACTO-247AC
Vgs (Max)±20V±20V±20V-
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C31A (Tc)42A (Tc)31A (Tc)31A (Tc)
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V110 nC @ 10 V72 nC @ 10 V72 nC @ 10 V
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3

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