IRFL4105TRPBF

MOSFET N-CH 55V 3.7A SOT223

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Specifications
Part Number:IRFL4105TRPBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 3.7A SOT223
RoHs Status:
Nkesp Part Number:73D-IRFL4105TRPBF
Part Status36501 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-223
Series:HEXFET®
Rds On (Max) @ Id, Vgs:45mOhm @ 3.7A, 10V
Power Dissipation (Max):1W (Ta)
Package / Case:TO-261-4, TO-261AA
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Base Product Number:IRFL4105
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In stock: 36501 pcs

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Product Comparison

Part Number IRFL4105TRPBF
IRFL4105TRPBF
IRFL4315
IRFL4315
IRFL4310TR
IRFL4310TR
IRFL4315PBF
IRFL4315PBF
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInternational Rectifier
Supplier Device PackageSOT-223SOT-223SOT-223SOT-223
SeriesHEXFET®HEXFET®-HEXFET®
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)2.6A (Ta)1.6A (Ta)2.6A (Ta)
FET Feature----
Base Product NumberIRFL4105---
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)1W (Ta)2.8W (Ta)-2.8W (Ta)
Vgs (Max)±20V±30V-±30V
Drive Voltage (Max Rds On, Min Rds On)10V10V-10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs(th) (Max) @ Id4V @ 250µA5V @ 250µA4V @ 250µA5V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
PackageTape & Reel (TR)TubeCut Tape (CT)Bulk
Drain to Source Voltage (Vdss)55 V150 V100 V150 V
Rds On (Max) @ Id, Vgs45mOhm @ 3.7A, 10V185mOhm @ 1.6A, 10V200mOhm @ 1.6A, 10V185mOhm @ 1.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 25 V420 pF @ 25 V330 pF @ 25 V420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V19 nC @ 10 V25 nC @ 10 V19 nC @ 10 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--55°C ~ 150°C (TJ)

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