In stock: 4285 pcs
Part Number |
IRFL4105TR
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IRFL210TRPBF
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IRFL31N20D
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IRFL4315
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Manufacturer | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Infineon Technologies | |
Power Dissipation (Max) | 1W (Ta) | 2W (Ta), 3.1W (Tc) | - | 2.8W (Ta) | |
Vgs (Max) | ±20V | ±20V | - | ±30V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 8.2 nC @ 10 V | - | 19 nC @ 10 V | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | |
Rds On (Max) @ Id, Vgs | 45mOhm @ 3.7A, 10V | 1.5Ohm @ 580mA, 10V | - | 185mOhm @ 1.6A, 10V | |
Supplier Device Package | SOT-223 | SOT-223 | D²PAK (TO-263) | SOT-223 | |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) | 960mA (Tc) | 31A (Ta) | 2.6A (Ta) | |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
FET Feature | - | - | - | - | |
Drain to Source Voltage (Vdss) | 55 V | 200 V | 200 V | 150 V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | - | 10V | |
Series | HEXFET® | - | - | HEXFET® | |
Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V | 140 pF @ 25 V | - | 420 pF @ 25 V | |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Package | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tube | |
Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-261-4, TO-261AA | |
Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | - | 5V @ 250µA |
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