In stock: 4457 pcs
| Part Number |
IRFL110PBF
|
IRFL110
 |
IRFL214
|
IRFL1006PBF
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Infineon Technologies | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Base Product Number | IRFL110 | IRFL110 | IRFL214 | - | |
| FET Feature | - | - | - | - | |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 900mA, 10V | 540mOhm @ 900mA, 10V | 2Ohm @ 470mA, 10V | 220mOhm @ 1.6A, 10V | |
| Supplier Device Package | SOT-223 | SOT-223 | SOT-223 | SOT-223 | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V | 180 pF @ 25 V | 140 pF @ 25 V | 160 pF @ 25 V | |
| Series | - | - | - | HEXFET® | |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) | 2W (Ta), 3.1W (Tc) | 2W (Ta), 3.1W (Tc) | 1W (Ta) | |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | 8.3 nC @ 10 V | 8.2 nC @ 10 V | 8 nC @ 10 V | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | |
| Package | Tube | Tube | Tube | Tube | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) | 1.5A (Tc) | 790mA (Tc) | 1.6A (Ta) | |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 250 V | 60 V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
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