IRFIB41N15DPBF

HEXFET N-CHANNEL POWER MOSFET

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Specifications
Part Number:IRFIB41N15DPBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:HEXFET N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-IRFIB41N15DPBF
Part Status3759 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:5.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB Full-Pak
Series:HEXFET®
Rds On (Max) @ Id, Vgs:45mOhm @ 25A, 10V
Power Dissipation (Max):48W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:41A (Tc)

In stock: 3759 pcs

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International Rectifier
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Product Comparison

Part Number IRFIB41N15DPBF
IRFIB41N15DPBF
IRFIB6N60APBF
IRFIB6N60APBF
IRFIB7N50A
IRFIB7N50A
IRFIB7N50LPBF
IRFIB7N50LPBF
ManufacturerInternational RectifierVishay SiliconixVishay SiliconixVishay Siliconix
Supplier Device PackageTO-220AB Full-PakTO-220-3TO-220-3TO-220-3
SeriesHEXFET®---
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V49 nC @ 10 V52 nC @ 10 V92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2520 pF @ 25 V1400 pF @ 25 V1423 pF @ 25 V2220 pF @ 25 V
Power Dissipation (Max)48W (Tc)60W (Tc)60W (Tc)46W (Tc)
Package / CaseTO-220-3 Full PackTO-220-3 Full Pack, Isolated TabTO-220-3 Full Pack, Isolated TabTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drain to Source Voltage (Vdss)150 V600 V500 V500 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
PackageBulkTubeTubeTube
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Current - Continuous Drain (Id) @ 25°C41A (Tc)5.5A (Tc)6.6A (Tc)6.8A (Tc)
Vgs (Max)±20V±30V±30V±30V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 10V750mOhm @ 3.3A, 10V520mOhm @ 4A, 10V380mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA4V @ 250µA4V @ 250µA5V @ 250µA

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