IRFH5302DTR2PBF

MOSFET N-CH 30V 29A 8VQFN

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Specifications
Part Number:IRFH5302DTR2PBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 30V 29A 8VQFN
Nkesp Part Number:73D-IRFH5302DTR2PBF
Part Status4554 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.35V @ 100µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PQFN (5x6) Single Die
Series:-
Rds On (Max) @ Id, Vgs:2.5mOhm @ 50A, 10V
Package / Case:8-PowerVDFN
Package:Cut Tape (CT)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3635 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
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In stock: 4554 pcs

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Data sheet

Product Comparison

Part Number IRFH5302DTR2PBF
IRFH5302DTR2PBF
IRFH5250TR2PBF
IRFH5250TR2PBF
IRFH5255TRPBF
IRFH5255TRPBF
IRFH5303TRPBF
IRFH5303TRPBF
ManufacturerInfineon TechnologiesInfineon TechnologiesInternational RectifierInfineon Technologies
Drain to Source Voltage (Vdss)30 V25 V25 V30 V
Series--HEXFET®HEXFET®
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V110 nC @ 10 V14.5 nC @ 10 V41 nC @ 10 V
Rds On (Max) @ Id, Vgs2.5mOhm @ 50A, 10V1.15mOhm @ 50A, 10V6mOhm @ 15A, 10V4.2mOhm @ 49A, 10V
Supplier Device PackagePQFN (5x6) Single Die8-PQFN (5x6)8-PQFN (5x6)8-PQFN (5x6)
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C29A (Ta), 100A (Tc)45A (Ta), 100A (Tc)15A (Ta), 51A (Tc)23A (Ta), 82A (Tc)
Vgs(th) (Max) @ Id2.35V @ 100µA2.35V @ 150µA2.35V @ 25µA2.35V @ 50µA
Input Capacitance (Ciss) (Max) @ Vds3635 pF @ 25 V7174 pF @ 13 V988 pF @ 13 V2190 pF @ 15 V
PackageCut Tape (CT)Cut Tape (CT)BulkTape & Reel (TR)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----

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