IRFF213

N-CHANNEL POWER MOSFET

Quantity
RFQ
Specifications
Part Number:IRFF213
Manufacturer:Harris Corporation
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-IRFF213
Part Status3153 pcs
Manufacturer:Harris Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-205AF (TO-39)
Series:-
Rds On (Max) @ Id, Vgs:2.4Ohm @ 1.25A, 10V
Power Dissipation (Max):15W (Tc)
Package / Case:TO-205AF Metal Can
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)

In stock: 3153 pcs

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Product Comparison

Part Number IRFF213
IRFF213
IRFF211
IRFF211
IRFF111
IRFF111
IRFF131
IRFF131
ManufacturerHarris CorporationHarris CorporationHarris CorporationInternational Rectifier
Package / CaseTO-205AF Metal CanTO-205AF Metal CanTO-205AF Metal CanTO-205AF Metal Can
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs2.4Ohm @ 1.25A, 10V1.5Ohm @ 1.25A, 10V600mOhm @ 1.5A, 10V-
Vgs (Max)±20V±20V±20V-
PackageBulkBulkBulkBulk
FET Feature----
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)2.2A (Tc)3.5A (Tc)8A (Tc)
Power Dissipation (Max)15W (Tc)15W (Tc)15W (Tc)-
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V7.5 nC @ 10 V7.5 nC @ 10 V-
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Input Capacitance (Ciss) (Max) @ Vds135 pF @ 25 V135 pF @ 25 V135 pF @ 25 V-
Series----
Drain to Source Voltage (Vdss)150 V150 V80 V80 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)10V10V10V-
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
Supplier Device PackageTO-205AF (TO-39)TO-205AF (TO-39)TO-205AF (TO-39)TO-205AF (TO-39)

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