IRFD9113

MOSFET P-CH 60V 600MA 4DIP

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Specifications
Part Number:IRFD9113
Manufacturer:Vishay / Siliconix
Description:MOSFET P-CH 60V 600MA 4DIP
Nkesp Part Number:73D-IRFD9113
Part Status4253 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:-
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-HVMDIP
Series:-
Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
Power Dissipation (Max):-
Package / Case:4-DIP (0.300", 7.62mm)
Package:Tube
Operating Temperature:-
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 15 V
FET Type:P-Channel
FET Feature:-
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Base Product Number:IRFD9113
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In stock: 4253 pcs

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Data sheet

Product Comparison

Part Number IRFD9113
IRFD9113
IRFD9014
IRFD9014
IRFD9024
IRFD9024
IRFD9010PBF
IRFD9010PBF
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
Operating Temperature--55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Base Product NumberIRFD9113IRFD9014IRFD9024IRFD9010
Rds On (Max) @ Id, Vgs1.6Ohm @ 300mA, 10V500mOhm @ 660mA, 10V280mOhm @ 960mA, 10V500mOhm @ 580mA, 10V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V270 pF @ 25 V570 pF @ 25 V240 pF @ 25 V
Package / Case4-DIP (0.300", 7.62mm)4-DIP (0.300", 7.62mm)4-DIP (0.300", 7.62mm)4-DIP (0.300", 7.62mm)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
FET Feature----
Drain to Source Voltage (Vdss)60 V60 V60 V50 V
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Power Dissipation (Max)-1.3W (Ta)1.3W (Ta)1W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id-4V @ 250µA4V @ 250µA4V @ 250µA
Current - Continuous Drain (Id) @ 25°C600mA (Ta)1.1A (Ta)1.6A (Ta)1.1A (Tc)
PackageTubeTubeTubeTube
Supplier Device Package4-HVMDIP4-HVMDIP4-HVMDIP4-HVMDIP
Series----
Gate Charge (Qg) (Max) @ Vgs15 nC @ 15 V12 nC @ 10 V19 nC @ 10 V11 nC @ 10 V

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