IRFD111

SMALL SIGNAL N-CHANNEL MOSFET

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RFQ
Specifications
Part Number:IRFD111
Manufacturer:Harris Corporation
Description:SMALL SIGNAL N-CHANNEL MOSFET
Nkesp Part Number:73D-IRFD111
Part Status3745 pcs
Manufacturer:Harris Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-DIP, Hexdip
Series:-
Rds On (Max) @ Id, Vgs:600mOhm @ 800mA, 10V
Power Dissipation (Max):1W (Tc)
Package / Case:4-DIP (0.300", 7.62mm)
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)

In stock: 3745 pcs

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Product Comparison

Part Number IRFD111
IRFD111
IRFD010PBF
IRFD010PBF
IRFD113
IRFD113
IRFD122
IRFD122
ManufacturerHarris CorporationVishay SiliconixVishay SiliconixHarris Corporation
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Current - Continuous Drain (Id) @ 25°C1A (Tc)1.7A (Tc)800mA (Tc)1.1A (Tc)
PackageBulkBulkTubeBulk
Power Dissipation (Max)1W (Tc)1W (Tc)1W (Tc)1W (Tc)
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V13 nC @ 10 V7 nC @ 10 V15 nC @ 10 V
Series----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds135 pF @ 25 V250 pF @ 25 V200 pF @ 25 V450 pF @ 25 V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Rds On (Max) @ Id, Vgs600mOhm @ 800mA, 10V200mOhm @ 860mA, 10V800mOhm @ 800mA, 10V400mOhm @ 600mA, 10V
Supplier Device Package4-DIP, Hexdip4-HVMDIP4-HVMDIP4-DIP, Hexdip
Package / Case4-DIP (0.300", 7.62mm)4-DIP (0.300", 7.62mm)4-DIP (0.300", 7.62mm)4-DIP (0.300", 7.62mm)
Drain to Source Voltage (Vdss)80 V50 V60 V100 V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±20V±20V±20V±20V

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