In stock: 3280 pcs
Part Number |
IRFB41N15DPBF
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IRFB4110GPBF
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IRFB4233PBF
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IRFB4215PBF
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Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
FET Feature | - | - | - | - | |
Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V | 4.5mOhm @ 75A, 10V | 37mOhm @ 28A, 10V | 9mOhm @ 54A, 10V | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 210 nC @ 10 V | 170 nC @ 10 V | 170 nC @ 10 V | |
Power Dissipation (Max) | 200W (Tc) | 370W (Tc) | 370W (Tc) | 270W (Tc) | |
Package | Tube | Tube | Tube | Tube | |
Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB | |
Vgs (Max) | ±30V | ±20V | ±30V | ±20V | |
Current - Continuous Drain (Id) @ 25°C | 41A (Tc) | 120A (Tc) | 56A (Tc) | 115A (Tc) | |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | |
Series | HEXFET® | HEXFET® | HEXFET® | HEXFET® | |
Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 25 V | 9620 pF @ 50 V | 5510 pF @ 25 V | 4080 pF @ 25 V | |
Drain to Source Voltage (Vdss) | 150 V | 100 V | 230 V | 60 V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
Vgs(th) (Max) @ Id | 5.5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
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