In stock: 27184 pcs
| Part Number |
IRFB3407ZPBF
|
IRFB4019PBF
 |
IRFB3607GPBF
|
IRFB3207ZPBF
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB | |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Base Product Number | IRFB3407 | IRFB4019 | - | IRFB3207 | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
| Vgs(th) (Max) @ Id | 4V @ 150µA | 4.9V @ 50µA | 4V @ 100µA | 4V @ 150µA | |
| Series | HEXFET® | - | HEXFET® | HEXFET® | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 50 V | 800 pF @ 50 V | 3070 pF @ 50 V | 6920 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 20 nC @ 10 V | 84 nC @ 10 V | 170 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 75 V | 150 V | 75 V | 75 V | |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 75A, 10V | 95mOhm @ 10A, 10V | 9mOhm @ 46A, 10V | 4.1mOhm @ 75A, 10V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Package | Tube | Tube | Tube | Tube | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | 17A (Tc) | 80A (Tc) | 120A (Tc) | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| Power Dissipation (Max) | 230W (Tc) | 80W (Tc) | 140W (Tc) | 300W (Tc) | |
| FET Feature | - | - | - | - |
We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >
