In stock: 10357 pcs
Part Number |
IRFB17N50LPBF
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IRFB23N20D
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IRFB20N50KPBF
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IRFB17N20D
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Manufacturer | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Infineon Technologies | |
Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB | |
Rds On (Max) @ Id, Vgs | 320mOhm @ 9.9A, 10V | 100mOhm @ 14A, 10V | 250mOhm @ 12A, 10V | 170mOhm @ 9.8A, 10V | |
Input Capacitance (Ciss) (Max) @ Vds | 2760 pF @ 25 V | 1960 pF @ 25 V | 2870 pF @ 25 V | 1100 pF @ 25 V | |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
FET Feature | - | - | - | - | |
Series | - | HEXFET® | - | HEXFET® | |
Vgs(th) (Max) @ Id | 5V @ 250µA | 5.5V @ 250µA | 5V @ 250µA | 5.5V @ 250µA | |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | 24A (Tc) | 20A (Tc) | 16A (Tc) | |
Drain to Source Voltage (Vdss) | 500 V | 200 V | 500 V | 200 V | |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Package | Tube | Tube | Tube | Tube | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
Power Dissipation (Max) | 220W (Tc) | 3.8W (Ta), 170W (Tc) | 280W (Tc) | 3.8W (Ta), 140W (Tc) | |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 86 nC @ 10 V | 110 nC @ 10 V | 50 nC @ 10 V | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V | |
Base Product Number | IRFB17 | - | IRFB20 | - |
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