IRF9Z24NSTRR

MOSFET P-CH 55V 12A D2PAK

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Part Number:IRF9Z24NSTRR
Manufacturer:Infineon Technologies
Description:MOSFET P-CH 55V 12A D2PAK
Nkesp Part Number:73D-IRF9Z24NSTRR
Part Status3594 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:175mOhm @ 7.2A, 10V
Power Dissipation (Max):3.8W (Ta), 45W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
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In stock: 3594 pcs

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Product Comparison

Part Number IRF9Z24NSTRR
IRF9Z24NSTRR
IRF9Z24NLPBF
IRF9Z24NLPBF
IRF9Z24NSTRL
IRF9Z24NSTRL
IRF9Z24PBF-BE3
IRF9Z24PBF-BE3
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesVishay Siliconix
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V350 pF @ 25 V350 pF @ 25 V570 pF @ 25 V
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-262-3 Long Leads, I²Pak, TO-262AATO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3
FET Feature----
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Drain to Source Voltage (Vdss)55 V55 V55 V60 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)12A (Tc)12A (Tc)11A (Tc)
SeriesHEXFET®HEXFET®HEXFET®-
Drive Voltage (Max Rds On, Min Rds On)10V10V10V-
Power Dissipation (Max)3.8W (Ta), 45W (Tc)3.8W (Ta), 45W (Tc)3.8W (Ta), 45W (Tc)60W (Tc)
Rds On (Max) @ Id, Vgs175mOhm @ 7.2A, 10V175mOhm @ 7.2A, 10V175mOhm @ 7.2A, 10V280mOhm @ 6.6A, 10V
Mounting TypeSurface MountThrough HoleSurface MountThrough Hole
Supplier Device PackageD2PAKTO-262D2PAKTO-220AB
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V19 nC @ 10 V19 nC @ 10 V19 nC @ 10 V
PackageTape & Reel (TR)TubeTape & Reel (TR)Tube
Vgs (Max)±20V±20V±20V±20V

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