IRF9520NPBF

MOSFET P-CH 100V 6.8A TO220AB

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Specifications
Part Number:IRF9520NPBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET P-CH 100V 6.8A TO220AB
RoHs Status:
Nkesp Part Number:73D-IRF9520NPBF
Part Status31940 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HEXFET®
Rds On (Max) @ Id, Vgs:480mOhm @ 4A, 10V
Package / Case:TO-220-3
Package:Tube
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Base Product Number:IRF9520
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In stock: 31940 pcs

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Product Comparison

Part Number IRF9520NPBF
IRF9520NPBF
IRF9520
IRF9520
IRF9520STRLPBF
IRF9520STRLPBF
IRF9511
IRF9511
ManufacturerInfineon TechnologiesHarris CorporationVishay SiliconixHarris Corporation
FET Feature----
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
PackageTubeBulkTape & Reel (TR)Bulk
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackageTO-220ABTO-220ABD²PAK (TO-263)TO-220AB
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V22 nC @ 10 V18 nC @ 10 V11 nC @ 10 V
SeriesHEXFET®---
Rds On (Max) @ Id, Vgs480mOhm @ 4A, 10V600mOhm @ 3.5A, 10V600mOhm @ 4.1A, 10V1.2Ohm @ 1.5A, 10V
Drain to Source Voltage (Vdss)100 V100 V100 V80 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V300 pF @ 25 V390 pF @ 25 V180 pF @ 25 V
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
Base Product NumberIRF9520-IRF9520-
Current - Continuous Drain (Id) @ 25°C6.8A (Tc)6A (Tc)6.8A (Tc)3A (Tc)
Package / CaseTO-220-3TO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3

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