IRF840LCSTRL

MOSFET N-CH 500V 8A D2PAK

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RFQ
Specifications
Part Number:IRF840LCSTRL
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 500V 8A D2PAK
Nkesp Part Number:73D-IRF840LCSTRL
Part Status4764 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:-
Rds On (Max) @ Id, Vgs:850mOhm @ 4.8A, 10V
Power Dissipation (Max):3.1W (Ta), 125W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Base Product Number:IRF840
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In stock: 4764 pcs

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Data sheet

Product Comparison

Part Number IRF840LCSTRL
IRF840LCSTRL
IRF840SPBF
IRF840SPBF
IRF840PBF
IRF840PBF
IRF840STRLPBF
IRF840STRLPBF
ManufacturerVishay SiliconixVishay SiliconixInfineon TechnologiesVishay Siliconix
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Series--HEXFET®-
Drain to Source Voltage (Vdss)500 V500 V500 V500 V
Supplier Device PackageD²PAK (TO-263)D²PAK (TO-263)TO-220ABD²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V1300 pF @ 25 V1300 pF @ 25 V1300 pF @ 25 V
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
Current - Continuous Drain (Id) @ 25°C8A (Tc)8A (Tc)8A (Tc)8A (Tc)
PackageTape & Reel (TR)TubeTubeTape & Reel (TR)
Base Product NumberIRF840IRF840-IRF840
Vgs (Max)±30V±20V±20V±20V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V850mOhm @ 4.8A, 10V850mOhm @ 4.8A, 10V850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V63 nC @ 10 V63 nC @ 10 V63 nC @ 10 V
Power Dissipation (Max)3.1W (Ta), 125W (Tc)3.1W (Ta), 125W (Tc)125W (Tc)3.1W (Ta), 125W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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