In stock: 3394 pcs
| Part Number |
IRF8308MTR1PBF
 |
IRF8302MTRPBF
 |
IRF8301MTRPBF
|
IRF830ASPBF
 |
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Siliconix | |
| Series | HEXFET® | HEXFET® | HEXFET® | - | |
| Supplier Device Package | DIRECTFET™ MX | DIRECTFET™ MX | DIRECTFET™ MT | D²PAK (TO-263) | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V | 53 nC @ 4.5 V | 77 nC @ 4.5 V | 24 nC @ 10 V | |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 27A, 10V | 1.8mOhm @ 31A, 10V | 1.5mOhm @ 32A, 10V | 1.4Ohm @ 3A, 10V | |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 500 V | |
| Base Product Number | IRF8308 | IRF8302 | IRF8301 | IRF830 | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Package / Case | DirectFET™ Isometric MX | DirectFET™ Isometric MX | DirectFET™ Isometric MT | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±30V | |
| FET Feature | - | - | - | - | |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA | 2.35V @ 150µA | 2.35V @ 150µA | 4.5V @ 250µA | |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Input Capacitance (Ciss) (Max) @ Vds | 4404 pF @ 15 V | 6030 pF @ 15 V | 6140 pF @ 15 V | 620 pF @ 25 V | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10V | |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 104W (Tc) | 2.8W (Ta), 89W (Tc) | 3.1W (Ta), 74W (Tc) | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 150A (Tc) | 31A (Ta), 190A (Tc) | 34A (Ta), 192A (Tc) | 5A (Tc) |
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