IRF820APBF

MOSFET N-CH 500V 2.5A TO220AB

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RFQ
Specifications
Part Number:IRF820APBF
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 500V 2.5A TO220AB
RoHs Status:
Nkesp Part Number:73D-IRF820APBF
Part Status22436 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:3Ohm @ 1.5A, 10V
Power Dissipation (Max):50W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Base Product Number:IRF820
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In stock: 22436 pcs

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Data sheet

Product Comparison

Part Number IRF820APBF
IRF820APBF
IRF820AS
IRF820AS
IRF820A
IRF820A
IRF8113TRPBF-1
IRF8113TRPBF-1
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixInfineon Technologies
Drain to Source Voltage (Vdss)500 V500 V500 V30 V
Base Product NumberIRF820IRF820IRF820-
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)2.5A (Tc)2.5A (Tc)17.2A (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V3Ohm @ 1.5A, 10V3Ohm @ 1.5A, 10V5.6mOhm @ 17.2A, 10V
Package / CaseTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-38-SOIC (0.154", 3.90mm Width)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTubeTubeTubeTape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 25 V340 pF @ 25 V340 pF @ 25 V2910 pF @ 15 V
Supplier Device PackageTO-220ABD²PAK (TO-263)TO-220AB8-SOIC
Power Dissipation (Max)50W (Tc)50W (Tc)50W (Tc)2.5W (Ta)
Series---HEXFET®
Drive Voltage (Max Rds On, Min Rds On)10V10V10V4.5V, 10V
Mounting TypeThrough HoleSurface MountThrough HoleSurface Mount
FET Feature----
Vgs(th) (Max) @ Id4.5V @ 250µA4.5V @ 250µA4.5V @ 250µA2.2V @ 250µA
Vgs (Max)±30V±30V±30V±20V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V17 nC @ 10 V17 nC @ 10 V36 nC @ 4.5 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel

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