In stock: 3239 pcs
| Part Number |
IRF8010STRRPBF
|
IRF820
 |
IRF820
 |
IRF8113TR
 |
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | onsemi | Harris Corporation | Infineon Technologies | |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 24 nC @ 10 V | 17 nC @ 10 V | 36 nC @ 4.5 V | |
| Vgs (Max) | ±20V | ±20V | ±30V | ±20V | |
| FET Feature | - | - | - | - | |
| Supplier Device Package | D2PAK | TO-220AB | TO-220AB | 8-SO | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 | 8-SOIC (0.154", 3.90mm Width) | |
| Series | HEXFET® | - | PowerMESH™ II | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 45A, 10V | 3Ohm @ 1.5A, 10V | 3Ohm @ 1.5A, 10V | 5.6mOhm @ 17.2A, 10V | |
| Package | Tape & Reel (TR) | Tube | Bulk | Tape & Reel (TR) | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 2.5A (Tc) | 4A (Tc) | 17.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Input Capacitance (Ciss) (Max) @ Vds | 3830 pF @ 25 V | 360 pF @ 25 V | 315 pF @ 25 V | 2910 pF @ 15 V | |
| Power Dissipation (Max) | 260W (Tc) | 50W (Tc) | 80W (Tc) | 2.5W (Ta) | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 2.2V @ 250µA | |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount | |
| Drain to Source Voltage (Vdss) | 100 V | 500 V | 500 V | 30 V |
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