IRF7460PBF

MOSFET N-CH 20V 12A 8SO

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Specifications
Part Number:IRF7460PBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 20V 12A 8SO
Nkesp Part Number:73D-IRF7460PBF
Part Status4208 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SO
Series:HEXFET®
Rds On (Max) @ Id, Vgs:10mOhm @ 12A, 10V
Power Dissipation (Max):2.5W (Ta)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
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In stock: 4208 pcs

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Product Comparison

Part Number IRF7460PBF
IRF7460PBF
IRF7458TR
IRF7458TR
IRF7459PBF
IRF7459PBF
IRF7463PBF
IRF7463PBF
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
SeriesHEXFET®HEXFET®HEXFET®HEXFET®
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device Package8-SO8-SO8-SO8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V, 16V2.8V, 10V2.7V, 10V
Package / Case8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds2050 pF @ 10 V2410 pF @ 15 V2480 pF @ 10 V3150 pF @ 15 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTubeTape & Reel (TR)TubeTube
Rds On (Max) @ Id, Vgs10mOhm @ 12A, 10V8mOhm @ 14A, 16V9mOhm @ 12A, 10V8mOhm @ 14A, 10V
Vgs (Max)±20V±30V±12V±12V
Drain to Source Voltage (Vdss)20 V30 V20 V30 V
Vgs(th) (Max) @ Id3V @ 250µA4V @ 250µA2V @ 250µA2V @ 250µA
Power Dissipation (Max)2.5W (Ta)2.5W (Ta)2.5W (Ta)2.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V59 nC @ 10 V35 nC @ 4.5 V51 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)14A (Ta)12A (Ta)14A (Ta)

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