In stock: 3414 pcs
| Part Number |
IRF6609TRPBF
 |
IRF6611
 |
IRF6607TR1
|
IRF6609TR1PBF
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Package / Case | DirectFET™ Isometric MT | DirectFET™ Isometric MX | DirectFET™ Isometric MT | DirectFET™ Isometric MT | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 7V | 4.5V, 10V | |
| Power Dissipation (Max) | 1.8W (Ta), 89W (Tc) | 3.9W (Ta), 89W (Tc) | 3.6W (Ta), 42W (Tc) | 1.8W (Ta), 89W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Input Capacitance (Ciss) (Max) @ Vds | 6290 pF @ 10 V | 4860 pF @ 15 V | 6930 pF @ 15 V | 6290 pF @ 10 V | |
| Supplier Device Package | DIRECTFET™ MT | DIRECTFET™ MX | DIRECTFET™ MT | DIRECTFET™ MT | |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V | 56 nC @ 4.5 V | 75 nC @ 4.5 V | 69 nC @ 4.5 V | |
| Drain to Source Voltage (Vdss) | 20 V | 30 V | 30 V | 20 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| FET Feature | - | - | - | - | |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 31A, 10V | 2.6mOhm @ 27A, 10V | 3.3mOhm @ 25A, 10V | 2mOhm @ 31A, 10V | |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA | 2.25V @ 250µA | 2V @ 250µA | 2.45V @ 250µA | |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) | 32A (Ta), 150A (Tc) | 27A (Ta), 94A (Tc) | 31A (Ta), 150A (Tc) | |
| Series | HEXFET® | HEXFET® | HEXFET® | HEXFET® | |
| Vgs (Max) | ±20V | ±20V | ±12V | ±20V |
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