IRF640STRLPBF

MOSFET N-CH 200V 18A TO263

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RFQ
Specifications
Part Number:IRF640STRLPBF
Manufacturer:Vishay / Siliconix
Description:MOSFET N-CH 200V 18A TO263
RoHs Status:
Nkesp Part Number:73D-IRF640STRLPBF
Part Status15289 pcs
Manufacturer:Vishay / Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:-
Rds On (Max) @ Id, Vgs:180mOhm @ 11A, 10V
Power Dissipation (Max):3.1W (Ta), 130W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Base Product Number:IRF640
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In stock: 15289 pcs

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Data sheet

Product Comparison

Part Number IRF640STRLPBF
IRF640STRLPBF
IRF642R
IRF642R
IRF640NSTRRPBF
IRF640NSTRRPBF
IRF640STRR
IRF640STRR
ManufacturerVishay SiliconixHarris CorporationInternational RectifierVishay Siliconix
Base Product NumberIRF640-IRF640IRF640
Current - Continuous Drain (Id) @ 25°C18A (Tc)16A (Tc)18A (Tc)18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V1275 pF @ 25 V1160 pF @ 25 V1300 pF @ 25 V
Drain to Source Voltage (Vdss)200 V200 V200 V200 V
PackageTape & Reel (TR)BulkBulkTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V64 nC @ 10 V67 nC @ 10 V70 nC @ 10 V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V220mOhm @ 10A, 10V150mOhm @ 11A, 10V180mOhm @ 11A, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Vgs (Max)±20V±20V±20V±20V
Series--HEXFET®-
Supplier Device PackageD²PAK (TO-263)TO-220ABD2PAKD²PAK (TO-263)
Power Dissipation (Max)3.1W (Ta), 130W (Tc)125W (Tc)150W (Tc)3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
FET Feature----

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