In stock: 24787 pcs
| Part Number |
IRF630STRLPBF
 |
IRF633
|
IRF630NSTRR
 |
IRF630S
 |
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Harris Corporation | Infineon Technologies | Vishay Siliconix | |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Series | - | - | HEXFET® | - | |
| FET Feature | - | - | - | - | |
| Base Product Number | IRF630 | - | - | IRF630 | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
| Supplier Device Package | D²PAK (TO-263) | TO-220AB | D2PAK | D²PAK (TO-263) | |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | 30 nC @ 10 V | 35 nC @ 10 V | 43 nC @ 10 V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | |
| Drain to Source Voltage (Vdss) | 200 V | 150 V | 200 V | 200 V | |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) | 75W (Tc) | 82W (Tc) | 3W (Ta), 74W (Tc) | |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V | 600 pF @ 25 V | 575 pF @ 25 V | 800 pF @ 25 V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | 8A (Tc) | 9.3A (Tc) | 9A (Tc) | |
| Package | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tube | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V | 600mOhm @ 5A, 10V | 300mOhm @ 5.4A, 10V | 400mOhm @ 5.4A, 10V | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
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