IRF5851TR

MOSFET N/P-CH 20V 6-TSOP

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Specifications
Part Number:IRF5851TR
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N/P-CH 20V 6-TSOP
Nkesp Part Number:73D-IRF5851TR
Part Status3617 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:1.25V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:HEXFET®
Rds On (Max) @ Id, Vgs:90mOhm @ 2.7A, 4.5V
Power - Max:960mW
Package / Case:SOT-23-6 Thin, TSOT-23-6
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.7A, 2.2A
Configuration:N and P-Channel
Base Product Number:IRF58
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In stock: 3617 pcs

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Product Comparison

Part Number IRF5851TR
IRF5851TR
IRF5850TRPBF
IRF5850TRPBF
IRF5810TR
IRF5810TR
IRF5810
IRF5810
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Rds On (Max) @ Id, Vgs90mOhm @ 2.7A, 4.5V135mOhm @ 2.2A, 4.5V90mOhm @ 2.9A, 4.5V90mOhm @ 2.9A, 4.5V
Drain to Source Voltage (Vdss)20V20V20V20V
Vgs(th) (Max) @ Id1.25V @ 250µA1.2V @ 250µA1.2V @ 250µA1.2V @ 250µA
SeriesHEXFET®HEXFET®HEXFET®HEXFET®
Base Product NumberIRF58IRF58IRF58IRF58
Supplier Device Package6-TSOP6-TSOP6-TSOP6-TSOP
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C2.7A, 2.2A2.2A2.9A2.9A
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tube
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6
Power - Max960mW960mW960mW960mW
Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V320pF @ 15V650pF @ 16V650pF @ 16V
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V5.4nC @ 4.5V9.6nC @ 4.5V9.6nC @ 4.5V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-
ConfigurationN and P-Channel2 P-Channel (Dual)2 P-Channel (Dual)2 P-Channel (Dual)
FET FeatureLogic Level GateLogic Level GateLogic Level GateLogic Level Gate

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