In stock: 4607 pcs
Part Number |
IRF5803D2TRPBF
![]() |
IRF5803D2TR
![]() |
IRF5806
![]() |
IRF5804TR
![]() |
|
---|---|---|---|---|---|
Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
Supplier Device Package | 8-SO | 8-SO | Micro6™(TSOP-6) | Micro6™(TSOP-6) | |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
FET Type | P-Channel | P-Channel | P-Channel | P-Channel | |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | 1110 pF @ 25 V | 594 pF @ 15 V | 680 pF @ 25 V | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | |
FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | - | - | |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) | 3.4A (Ta) | 4A (Ta) | 2.5A (Ta) | |
Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | 112mOhm @ 3.4A, 10V | 86mOhm @ 4A, 4.5V | 198mOhm @ 2.5A, 10V | |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | |
Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 1.2V @ 250µA | 3V @ 250µA | |
Series | FETKY™ | FETKY™ | HEXFET® | HEXFET® | |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 37 nC @ 10 V | 11.4 nC @ 4.5 V | 21 nC @ 10 V | |
Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta) | |
Drain to Source Voltage (Vdss) | 40 V | 40 V | 20 V | 40 V | |
Package | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >