In stock: 4756 pcs
| Part Number |
IRF510S
 |
IRF4905SPBF
 |
IRF520
 |
IRF4905STRLPBF
|
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | Infineon Technologies | onsemi | Infineon Technologies | |
| FET Feature | - | - | - | - | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) | 42A (Tc) | 9.2A (Tc) | 42A (Tc) | |
| FET Type | N-Channel | P-Channel | N-Channel | P-Channel | |
| Supplier Device Package | D²PAK (TO-263) | D2PAK | TO-220AB | D2PAK | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | - | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) | 170W (Tc) | 60W (Tc) | 170W (Tc) | |
| Drain to Source Voltage (Vdss) | 100 V | 55 V | 100 V | 55 V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | 180 nC @ 10 V | 15 nC @ 10 V | 180 nC @ 10 V | |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V | 20mOhm @ 42A, 10V | 270mOhm @ 5.6A, 10V | 20mOhm @ 42A, 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V | 3500 pF @ 25 V | 350 pF @ 25 V | 3500 pF @ 25 V | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount | |
| Series | - | HEXFET® | - | HEXFET® | |
| Base Product Number | IRF510 | - | - | IRF4905 | |
| Package | Tube | Tube | Tube | Tape & Reel (TR) |
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