IRF510

MOSFET N-CH 100V 5.6A TO220AB

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Specifications
Part Number:IRF510
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 100V 5.6A TO220AB
Nkesp Part Number:73D-IRF510
Part Status219292 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:540mOhm @ 3.4A, 10V
Power Dissipation (Max):43W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)

In stock: 219292 pcs

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Product Comparison

Part Number IRF510
IRF510
IRF4905STRRPBF
IRF4905STRRPBF
IRF4905LPBF
IRF4905LPBF
IRF453
IRF453
ManufactureronsemiInfineon TechnologiesInfineon TechnologiesHarris Corporation
PackageTubeTape & Reel (TR)TubeBulk
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V180 nC @ 10 V180 nC @ 10 V130 nC @ 10 V
Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V20mOhm @ 42A, 10V20mOhm @ 42A, 10V500mOhm @ 7.2A, 10V
Supplier Device PackageTO-220ABD2PAKTO-262TO-3
Power Dissipation (Max)43W (Tc)170W (Tc)170W (Tc)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)42A (Tc)42A (Tc)7.2A (Tc)
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Drain to Source Voltage (Vdss)100 V55 V55 V450 V
Package / CaseTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-262-3 Long Leads, I²Pak, TO-262AATO-204AA, TO-3
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V3500 pF @ 25 V3500 pF @ 25 V1800 pF @ 25 V
Mounting TypeThrough HoleSurface MountThrough HoleThrough Hole
Series-HEXFET®HEXFET®-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±20V±20V±20V±20V
FET Feature----
FET TypeN-ChannelP-ChannelP-ChannelN-Channel

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