IRF362

N-CHANNEL HERMETIC MOS HEXFET

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RFQ
Specifications
Part Number:IRF362
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:N-CHANNEL HERMETIC MOS HEXFET
Nkesp Part Number:73D-IRF362
Part Status2634 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-204AA (TO-3)
Series:-
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):300W
Package / Case:TO-204AA, TO-3
Package:Bulk
Operating Temperature:-
Mounting Type:Through Hole
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:22A

In stock: 2634 pcs

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International Rectifier
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Product Comparison

Part Number IRF362
IRF362
IRF3610STRLPBF
IRF3610STRLPBF
IRF3610SPBF
IRF3610SPBF
IRF3515L
IRF3515L
ManufacturerInternational RectifierInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drain to Source Voltage (Vdss)400 V100 V100 V150 V
Vgs (Max)--±20V±30V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C22A103A (Tc)103A (Tc)41A (Tc)
Vgs(th) (Max) @ Id-4V @ 250µA4V @ 250µA4.5V @ 250µA
Power Dissipation (Max)300W-333W (Tc)200W (Tc)
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeThrough HoleSurface MountSurface MountThrough Hole
Rds On (Max) @ Id, Vgs-11.6mOhm @ 62A, 10V11.6mOhm @ 62A, 10V45mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On)--10V10V
Operating Temperature---55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Series-HEXFET®HEXFET®HEXFET®
Supplier Device PackageTO-204AA (TO-3)PG-TO263-3PG-TO263-3TO-262
PackageBulkTape & Reel (TR)TubeTube
Package / CaseTO-204AA, TO-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-262-3 Long Leads, I²Pak, TO-262AA

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