IRF250P225

MOSFET N-CH 250V 69A TO247AC

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Specifications
Part Number:IRF250P225
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 250V 69A TO247AC
RoHs Status:
Nkesp Part Number:73D-IRF250P225
Part Status8437 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 270µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AC
Series:StrongIRFET™
Rds On (Max) @ Id, Vgs:22mOhm @ 41A, 10V
Power Dissipation (Max):313W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:4897 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:96 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Base Product Number:IRF250
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In stock: 8437 pcs

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Data sheet

Product Comparison

Part Number IRF250P225
IRF250P225
IRF242
IRF242
IRF2804SPBF-IR
IRF2804SPBF-IR
IRF233
IRF233
ManufacturerInfineon TechnologiesInternational RectifierInternational RectifierHarris Corporation
Input Capacitance (Ciss) (Max) @ Vds4897 pF @ 50 V-6450 pF @ 25 V600 pF @ 25 V
FET Feature----
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
Power Dissipation (Max)313W (Tc)125W300W (Tc)75W (Tc)
PackageTubeBulkBulkBulk
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V-240 nC @ 10 V30 nC @ 10 V
Rds On (Max) @ Id, Vgs22mOhm @ 41A, 10V-2mOhm @ 75A, 10V600mOhm @ 5A, 10V
Drain to Source Voltage (Vdss)250 V200 V40 V150 V
Current - Continuous Drain (Id) @ 25°C69A (Tc)16A75A (Tc)8A (Tc)
Package / CaseTO-247-3TO-204AA, TO-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-204AA, TO-3
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Base Product NumberIRF250---
Operating Temperature-55°C ~ 175°C (TJ)--55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id4V @ 270µA-4V @ 250µA4V @ 250µA
SeriesStrongIRFET™-HEXFET®-
Supplier Device PackageTO-247ACTO-3D2PAKTO-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V-10V10V
Vgs (Max)±20V-±20V±20V

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