IQDH35N03LM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Quantity
RFQ
Specifications
Part Number:IQDH35N03LM5CGATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:OPTIMOS 6 POWER-TRANSISTOR
RoHs Status:
Nkesp Part Number:73D-IQDH35N03LM5CGATMA1
Part Status12126 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 1.46mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TTFN-9-U02
Series:OptiMOS™ 5
Rds On (Max) @ Id, Vgs:0.35mOhm @ 50A, 10V
Power Dissipation (Max):2.5W (Ta), 278W (Tc)
Package / Case:9-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:18000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:197 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:66A (Ta), 700A (Tc)
Base Product Number:IQDH35

In stock: 12126 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Infineon Technologies
Quantity
QUICK RFQ

Product Comparison

Part Number IQDH35N03LM5CGATMA1
IQDH35N03LM5CGATMA1
UF4C120070K4S
UF4C120070K4S
APT31M100L
APT31M100L
DMN1014UFDF-7
DMN1014UFDF-7
ManufacturerInfineon TechnologiesQorvoMicrochip TechnologyDiodes Incorporated
Drain to Source Voltage (Vdss)30 V1200 V1000 V12 V
Power Dissipation (Max)2.5W (Ta), 278W (Tc)217W (Tc)1040W (Tc)700mW (Ta)
Supplier Device PackagePG-TTFN-9-U02TO-247-4TO-264U-DFN2020-6 (Type F)
Vgs (Max)±20V±20V±30V±8V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C66A (Ta), 700A (Tc)27.5A (Tc)32A (Tc)8A (Ta)
Rds On (Max) @ Id, Vgs0.35mOhm @ 50A, 10V91mOhm @ 20A, 12V400mOhm @ 16A, 10V16mOhm @ 2A, 4.5V
FET Feature----
Package / Case9-PowerTDFNTO-247-4TO-264-3, TO-264AA6-UDFN Exposed Pad
Base Product NumberIQDH35-APT31M100DMN1014
PackageTape & Reel (TR)TubeTubeTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs197 nC @ 10 V37.8 nC @ 15 V260 nC @ 10 V6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds18000 pF @ 15 V1370 pF @ 800 V8500 pF @ 25 V515 pF @ 6 V
SeriesOptiMOS™ 5-POWER MOS 8™-
Mounting TypeSurface MountThrough HoleThrough HoleSurface Mount
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V-10V2.5V, 4.5V
Vgs(th) (Max) @ Id2V @ 1.46mA6V @ 10mA5V @ 2.5mA1V @ 250µA

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB