IPW90R800C3FKSA1

MOSFET N-CH 900V 6.9A TO247-3

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Specifications
Part Number:IPW90R800C3FKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 900V 6.9A TO247-3
Nkesp Part Number:73D-IPW90R800C3FKSA1
Part Status4707 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 460µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO247-3-1
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:800mOhm @ 4.1A, 10V
Power Dissipation (Max):104W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
Base Product Number:IPW90R
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In stock: 4707 pcs

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Data sheet

Product Comparison

Part Number IPW90R800C3FKSA1
IPW90R800C3FKSA1
IPW80R290C3AXKSA1
IPW80R290C3AXKSA1
IPW90R340C3XKSA1
IPW90R340C3XKSA1
IPW90R1K0C3
IPW90R1K0C3
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Vgs (Max)±20V±20V±20V±20V
Base Product NumberIPW90RIPW80R290IPW90R340-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs800mOhm @ 4.1A, 10V290mOhm @ 11A, 10V340mOhm @ 9.2A, 10V1Ohm @ 3.3A, 10V
PackageTubeTubeTubeBulk
Current - Continuous Drain (Id) @ 25°C6.9A (Tc)17A (Tc)15A (Tc)5.7A (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesCoolMOS™Automotive, AEC-Q101, CoolMOS™CoolMOS™CoolMOS™
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V117 nC @ 10 V94 nC @ 10 V34 nC @ 10 V
Vgs(th) (Max) @ Id3.5V @ 460µA3.9V @ 1mA3.5V @ 1mA3.5V @ 370µA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Power Dissipation (Max)104W (Tc)227W (Tc)208W (Tc)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Drain to Source Voltage (Vdss)900 V800 V900 V900 V
FET Feature----
Supplier Device PackagePG-TO247-3-1PG-TO247-3PG-TO247-3-21PG-TO247-3-21
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V2300 pF @ 100 V2400 pF @ 100 V850 pF @ 100 V

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