IPP80N06S3L-05

MOSFET N-CH 55V 80A TO220-3

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Specifications
Part Number:IPP80N06S3L-05
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 80A TO220-3
Nkesp Part Number:73D-IPP80N06S3L-05
Part Status4340 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.2V @ 115µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:4.8mOhm @ 69A, 10V
Power Dissipation (Max):165W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:13060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:273 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:IPP80N
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In stock: 4340 pcs

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Product Comparison

Part Number IPP80N06S3L-05
IPP80N06S3L-05
IPP80N06S4L05AKSA2
IPP80N06S4L05AKSA2
IPP80N06S2LH5AKSA2
IPP80N06S2LH5AKSA2
IPP80N06S407AKSA1
IPP80N06S407AKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Base Product NumberIPP80NIPP80NIPP80NIPP80N
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Rds On (Max) @ Id, Vgs4.8mOhm @ 69A, 10V8.5mOhm @ 40A, 4.5V5mOhm @ 80A, 10V7.4mOhm @ 80A, 10V
Supplier Device PackagePG-TO220-3-1PG-TO220-3-1PG-TO220-3-1PG-TO220-3-1
Vgs(th) (Max) @ Id2.2V @ 115µA2.2V @ 60µA2V @ 250µA4V @ 40µA
Input Capacitance (Ciss) (Max) @ Vds13060 pF @ 25 V8180 pF @ 25 V5000 pF @ 25 V4500 pF @ 25 V
Drain to Source Voltage (Vdss)55 V60 V55 V60 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)80A (Tc)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
SeriesOptiMOS™Automotive, AEC-Q101, OptiMOS™OptiMOS™OptiMOS™
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)5V, 10V4.5V, 10V4.5V, 10V10V
Vgs (Max)±16V±16V±20V±20V
PackageTubeTubeTubeTube
Power Dissipation (Max)165W (Tc)107W (Tc)300W (Tc)79W (Tc)
Gate Charge (Qg) (Max) @ Vgs273 nC @ 10 V110 nC @ 10 V190 nC @ 10 V56 nC @ 10 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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