IPP80N06S2L11AKSA2

MOSFET N-CH 55V 80A TO220-3

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Specifications
Part Number:IPP80N06S2L11AKSA2
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 80A TO220-3
RoHs Status:
Nkesp Part Number:73D-IPP80N06S2L11AKSA2
Part Status3257 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 93µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:10.7mOhm @ 40A, 10V
Power Dissipation (Max):158W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:IPP80N
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In stock: 3257 pcs

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Product Comparison

Part Number IPP80N06S2L11AKSA2
IPP80N06S2L11AKSA2
IPP80N06S2L06AKSA1
IPP80N06S2L06AKSA1
IPP80N06S2L-06
IPP80N06S2L-06
IPP80N06S2L05AKSA1
IPP80N06S2L05AKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Base Product NumberIPP80NIPP80N-IPP80N
Drain to Source Voltage (Vdss)55 V55 V55 V55 V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs(th) (Max) @ Id2V @ 93µA2V @ 180µA2V @ 180µA2V @ 250µA
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)80A (Tc)
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Input Capacitance (Ciss) (Max) @ Vds2075 pF @ 25 V3800 pF @ 25 V3800 pF @ 25 V5700 pF @ 25 V
Power Dissipation (Max)158W (Tc)250W (Tc)250W (Tc)300W (Tc)
Vgs (Max)±20V±20V±20V±20V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
SeriesOptiMOS™OptiMOS™*OptiMOS™
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V150 nC @ 10 V150 nC @ 10 V230 nC @ 10 V
PackageTubeTubeBulkTube
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackagePG-TO220-3-1PG-TO220-3-1PG-TO220-3-1PG-TO220-3-1
Rds On (Max) @ Id, Vgs10.7mOhm @ 40A, 10V6.3mOhm @ 69A, 10V6.3mOhm @ 69A, 10V4.8mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V10V

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