IPP80N06S2L11AKSA1

MOSFET N-CH 55V 80A TO220-3

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Specifications
Part Number:IPP80N06S2L11AKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 80A TO220-3
RoHs Status:
Nkesp Part Number:73D-IPP80N06S2L11AKSA1
Part Status3316 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 93µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:11mOhm @ 60A, 10V
Power Dissipation (Max):158W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:IPP80N
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In stock: 3316 pcs

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Product Comparison

Part Number IPP80N06S2L11AKSA1
IPP80N06S2L11AKSA1
IPP80N06S2L06AKSA1
IPP80N06S2L06AKSA1
IPP80N06S2L-07
IPP80N06S2L-07
IPP80N06S3L-08
IPP80N06S3L-08
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Base Product NumberIPP80NIPP80NIPP80NIPP80N
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Power Dissipation (Max)158W (Tc)250W (Tc)210W (Tc)105W (Tc)
PackageTubeTubeTubeTube
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V150 nC @ 10 V130 nC @ 10 V134 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2075 pF @ 25 V3800 pF @ 25 V3160 pF @ 25 V6475 pF @ 25 V
Vgs(th) (Max) @ Id2V @ 93µA2V @ 180µA2V @ 150µA2.2V @ 55µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesOptiMOS™OptiMOS™OptiMOS™OptiMOS™
Supplier Device PackagePG-TO220-3-1PG-TO220-3-1PG-TO220-3-1PG-TO220-3-1
FET Feature----
Drain to Source Voltage (Vdss)55 V55 V55 V55 V
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V5V, 10V
Vgs (Max)±20V±20V±20V±16V
Rds On (Max) @ Id, Vgs11mOhm @ 60A, 10V6.3mOhm @ 69A, 10V7mOhm @ 60A, 10V7.9mOhm @ 43A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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