IPP80N06S2L09AKSA1

MOSFET N-CH 55V 80A TO220-3

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Specifications
Part Number:IPP80N06S2L09AKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 80A TO220-3
RoHs Status:
Nkesp Part Number:73D-IPP80N06S2L09AKSA1
Part Status3930 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 125µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:8.5mOhm @ 52A, 10V
Power Dissipation (Max):190W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:IPP80N
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In stock: 3930 pcs

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Product Comparison

Part Number IPP80N06S2L09AKSA1
IPP80N06S2L09AKSA1
IPP80N06S3L-08
IPP80N06S3L-08
IPP80N06S2L05AKSA1
IPP80N06S2L05AKSA1
IPP80N06S2L-07
IPP80N06S2L-07
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Input Capacitance (Ciss) (Max) @ Vds2620 pF @ 25 V6475 pF @ 25 V5700 pF @ 25 V3160 pF @ 25 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id2V @ 125µA2.2V @ 55µA2V @ 250µA2V @ 150µA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V5V, 10V10V4.5V, 10V
Base Product NumberIPP80NIPP80NIPP80NIPP80N
PackageTubeTubeTubeTube
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V134 nC @ 10 V230 nC @ 10 V130 nC @ 10 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs (Max)±20V±16V±20V±20V
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)80A (Tc)
SeriesOptiMOS™OptiMOS™OptiMOS™OptiMOS™
FET Feature----
Rds On (Max) @ Id, Vgs8.5mOhm @ 52A, 10V7.9mOhm @ 43A, 10V4.8mOhm @ 80A, 10V7mOhm @ 60A, 10V
Supplier Device PackagePG-TO220-3-1PG-TO220-3-1PG-TO220-3-1PG-TO220-3-1
Drain to Source Voltage (Vdss)55 V55 V55 V55 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)190W (Tc)105W (Tc)300W (Tc)210W (Tc)

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