IPP65R380C6

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity
RFQ
Specifications
Part Number:IPP65R380C6
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:POWER FIELD-EFFECT TRANSISTOR, 1
Nkesp Part Number:73D-IPP65R380C6
Part Status4624 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 320µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:380mOhm @ 3.2A, 10V
Power Dissipation (Max):83W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)

In stock: 4624 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Infineon Technologies
Quantity
QUICK RFQ

Product Comparison

Part Number IPP65R380C6
IPP65R380C6
IPP65R600E6XKSA1
IPP65R600E6XKSA1
IPP65R280E6XKSA1
IPP65R280E6XKSA1
IPP65R225C7
IPP65R225C7
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
PackageBulkTubeTubeBulk
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id3.5V @ 320µA3.5V @ 210µA3.5V @ 440µA4V @ 240µA
Drain to Source Voltage (Vdss)650 V650 V650 V650 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Rds On (Max) @ Id, Vgs380mOhm @ 3.2A, 10V600mOhm @ 2.1A, 10V280mOhm @ 4.4A, 10V225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C10.6A (Tc)7.3A (Tc)13.8A (Tc)11A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Supplier Device PackagePG-TO220-3-1PG-TO220-3PG-TO220-3PG-TO220-3-1
SeriesCoolMOS™CoolMOS™CoolMOS™CoolMOS™
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Power Dissipation (Max)83W (Tc)63W (Tc)104W (Tc)63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 100 V440 pF @ 100 V950 pF @ 100 V996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V23 nC @ 10 V45 nC @ 10 V20 nC @ 10 V
Vgs (Max)±20V±20V±20V±20V
FET Feature----

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB