IPP25N06S3L-22

MOSFET N-CH 55V 25A TO220-3

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Specifications
Part Number:IPP25N06S3L-22
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 25A TO220-3
Nkesp Part Number:73D-IPP25N06S3L-22
Part Status3514 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.2V @ 20µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:21.6mOhm @ 17A, 10V
Power Dissipation (Max):50W (Tc)
Package / Case:TO-220-3
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Base Product Number:IPP25N
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In stock: 3514 pcs

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Data sheet

Product Comparison

Part Number IPP25N06S3L-22
IPP25N06S3L-22
IPP230N06L3GXKSA1
IPP230N06L3GXKSA1
IPP26CNE8N G
IPP26CNE8N G
IPP220N25NFDAKSA1
IPP220N25NFDAKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drain to Source Voltage (Vdss)55 V60 V85 V250 V
Supplier Device PackagePG-TO220-3-1PG-TO220-3PG-TO220-3PG-TO220-3
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)5V, 10V4.5V, 10V10V10V
Base Product NumberIPP25N-IPP26CIPP220
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V7 nC @ 4.5 V31 nC @ 10 V86 nC @ 10 V
FET Feature----
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Power Dissipation (Max)50W (Tc)36W71W (Tc)300W (Tc)
PackageTubeBulkTubeTube
SeriesOptiMOS™OptiMOS®OptiMOS™OptiMOS™
Current - Continuous Drain (Id) @ 25°C25A (Tc)30A35A (Tc)61A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Vgs(th) (Max) @ Id2.2V @ 20µA2.2V @ 11µA4V @ 39µA4V @ 270µA
Rds On (Max) @ Id, Vgs21.6mOhm @ 17A, 10V23mOhm @ 30A, 10V26mOhm @ 35A, 10V22mOhm @ 61A, 10V
Input Capacitance (Ciss) (Max) @ Vds2260 pF @ 25 V1200 pF @ 30 V2070 pF @ 40 V7076 pF @ 125 V
Vgs (Max)±16V±20V±20V±20V

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